PART |
Description |
Maker |
IS61SP12836 IS61SP12836-133TQ IS61SP12836-5TQ IS61 |
128K x 36 SYNCHRONOUS PIPELINED STATIC RAM SYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
IDT70V9269L12PRF IDT70V9269L12PRFI IDT70V9279S9PRF |
32K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through 16K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through From old datasheet system Small Signal Diode HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 12 ns, PQFP128 HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 25 ns, PQFP128 HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 20 ns, PQFP128 HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP128 HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 16K X 16 DUAL-PORT SRAM, 18 ns, PQFP128 HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM 高.3 32K的16 SYNCHRONOU S双,端口静态内
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
CXK77B3610GB- CXK77B3610GB-6 CXK77B3610GB-7 CXK77B |
High Speed 1MBit Bi-CMOS Synchronous Static RAM(高M位Bi-CMOS同步静态RAM) High Speed Bi-CMOS Synchronous Static RAM From old datasheet system
|
SONY[Sony Corporation]
|
STK12C68-5KF35 STK12C68-5KF35I STK12C68-5KF35M STK |
8K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM 8K x 8 AutoStore垄芒 nvSRAM QuantumTrap垄芒 CMOS Nonvolatile Static RAM 8K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM 8K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM CAP 470PF 500V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 8K x 8 AutoStorenvSRAM QuantumTrapCMOS Nonvolatile Static RAM 8K的8自动存储非易失QuantumTrap⑩⑩的CMOS非易失性静态随机存储器 8K x 8 AutoStore??nvSRAM QuantumTrap??CMOS Nonvolatile Static RAM 8K X 8 NON-VOLATILE SRAM, 25 ns, PDIP28 8K X 8 NON-VOLATILE SRAM, 55 ns, PDSO28 8K X 8 NON-VOLATILE SRAM, 45 ns, CDIP28
|
SIMTEK List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc. CYPRESS SEMICONDUCTOR CORP
|
MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100 Replaced by PTH12000W :
|
MOTOROLA INC NEC, Corp. Motorola Mobility Holdings, Inc. Motorola, Inc.
|
IS61LV6464 |
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI
|
IDT70V7319S IDT70V7319S200DDI IDT70V7319S133BC IDT |
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双,端口静态与3.3V.5V的内存界 JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
IS61SP6464 09_61SP6464 |
SYNCHRONOUS STATIC RAM From old datasheet system
|
ICSI
|
IS61VF51232 |
512K x 32 Synchronous Flow-through Static RAM
|
Integrated Silicon Solution
|